CHANL is a new instrumentation facility which will be growing quite rapidly over the next few months. Check back often to see which instruments have come on-line. [printer friendly pdf]
Name |
Instrument |
Location |
Image |
SEM
|
Hitachi S-4700
Field Emission Scanning Electron Microscope
|
Chapman 030A |
|
Uses: Allows the user to obtain a three dimensional image of their sample on the nanometer to micron scale. |
| |
ASML 193 Stepper
|
ASML 5500/950B 193nm Stepper |
NC State University
(Triangle National Lithography Center) |
 |
Uses: The scanner allows you to pattern a photoresist layer by exposing it to 193nm light through a photomask.
|
| |
Coming Soon…. |
DRIE |
Alcatel AMS 100 Deep Reactive Ion Etcher |
Chapman Cleanroom
|
|
| Uses: Allows for a highly anisotropic etch process used to create deep, steep-sided holes and trenches in wafers. |
| |
Ellipsometer |
J. A. Woollam Variable Angle Spectroscopic Ellipsometer |
Phillips 128
|
|
| Uses: Allows a very precise determination of film thicknesses when the optical constants of the films are known. |
| |
FIB |
FEI Helios 600 NanoLab Dual Beam System |
Chapman B30 |
|
| Uses: The dual electron and ion beam system allows for simultaneous SEM imaging and ion beam patterning (selective removal or addition of material). |
| |
PECVD |
Advanced Vacuum Vision 310 Plasma Enhanced Chemical Vapor Deposition System
|
Chapman Cleanroom
|
 |
| Uses: The PECVD system can deposit low stress silicon nitride and silicon dioxide films
. |
| |
PLD |
PVD Products Nano-PLD-1000 Pulsed Laser Deposition System |
Chapman Cleanroom
|
 |
| Uses: Deposits uniform thin films by focusing a high power pulsed laser beam on a target of the desired composition to vaporize the target material and deposited it as a thin film on a substrate. |
| |
UPS |
Ultraviolet Photoelectron Spectrometer |
Chapman 030C
|
|
| Uses: Allows the user to determine the workfunction (energy between the HOMO level and vacuum level) of their sample. |
| |
XPS |
X-Ray Photoelectron Spectrometer |
Chapman 030C
|
|
| Uses: Allows the user to determine the elemental composition of the top ~10 nm of the sample surface. |
